The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Oct. 22, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Wei-Sheng Lei, San Jose, CA (US);
Kurtis Leschkies, San Jose, CA (US);
Roman Gouk, San Jose, CA (US);
Steven Verhaverbeke, San Francisco, CA (US);
Visweswaren Sivaramakrishnan, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In an embodiment, a method of forming a blind via in a substrate comprising a mask layer, a conductive layer, and a dielectric layer is provided. The method includes detecting the mask layer by a sensor, the mask layer providing a substrate surface; determining a property of the blind via, the property comprising one or more of a top diameter, a bottom diameter, a volume, or a taper angle; focusing a Gaussian laser beam, under laser process parameters, at the substrate surface to remove at least a portion of the mask layer; adjusting the laser process parameters based on the property; and focusing the laser beam, under the adjusted laser process parameters, to remove at least a portion of the dielectric layer within the volume to form the blind via. The mask layer can be pre-etched. Apparatus for forming a blind via in a substrate are also provided.