The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Apr. 22, 2022
Applicants:
Samsung Electronics Co., Ltd., Suwon-si, KR;
University of the Ryukyus, Okinawa, JP;
Inventors:
Kyung Bae Park, Hwaseong-si, KR;
Hiroshi Kageyama, Nishihara, JP;
Akira Higa, Nishihara, JP;
Takashi Noguchi, Nishihara, JP;
Assignees:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
University of the Ryukyus, Okinawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 39/34 (2023.01); H10K 39/32 (2023.01); H10K 59/65 (2023.01);
U.S. Cl.
CPC ...
H10K 39/32 (2023.02); H10K 39/34 (2023.02); H10K 59/65 (2023.02);
Abstract
An imaging sensor includes a photoelectric conversion element, and a plurality of transistors connected to the photoelectric conversion element. The plurality of transistors are configured to transmit charges generated by the photoelectric conversion element. The plurality of transistors includes at least one transistor that includes a silicon semiconductor layer and at least one other transistor that includes an oxide semiconductor layer.