The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Aug. 31, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Karan Mehta, San Francisco, CA (US);

Richard Jones, San Mateo, CA (US);

Olufemi Dosunmu, San Jose, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/00 (2025.01); G01R 31/26 (2020.01); H10H 20/857 (2025.01); G01C 19/72 (2006.01);
U.S. Cl.
CPC ...
H10H 20/042 (2025.01); G01R 31/2635 (2013.01); H10H 20/857 (2025.01); G01C 19/721 (2013.01);
Abstract

In one embodiment of a superluminescent diode, a first diode adapted on a semiconductor die is to be forward-biased to output optical energy in response to a bias signal, and a second diode adapted on the semiconductor die is to be reverse-biased, the second diode to receive and absorb back propagating optical energy from the first diode and output a measure of the back propagating optical energy as an absorber feedback current. A comparator may be configured to compare the absorber feedback current to a reference current and output a comparison signal, and a driver control circuit coupled to the comparator may provide the bias signal based at least in part on the comparison signal. Other embodiments are described and claimed.


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