The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
May. 05, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Shou-Wan Huang, Hsinchu, TW;
Chun-Hsien Lin, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating semiconductor device includes the steps of providing a substrate having a first region and a second region, forming a first fin-shaped structure on the first region, removing part of the first fin-shaped structure to form a first trench, forming a dielectric layer in the first trench to form a double diffusion break (DDB) structure, forming a first gate structure and a second gate structure on the DDB structure as a bottom surface of the first gate structure is lower than a top surface of the first fin-shaped structure, and forming a contact plug between the first gate structure and the second gate structure on the DDB structure.