The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

May. 20, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Ka-Hing Fung, Zhudong Township, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 62/118 (2025.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 64/017 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01);
Abstract

Semiconductor structures and methods for manufacturing the same are provided. A semiconductor device structure is provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a gate structure formed over the first nanostructures. The semiconductor structure includes a source/drain (S/D) structure formed adjacent to the gate structure, and a silicide layer formed on a sidewall surface of the S/D structure. The semiconductor structure also includes an S/D contact structure formed over the silicide layer, and the S/D contact structure extends from a first position to a second position The first position is higher than the top surface of the gate structure, and the second position is below the bottommost nanostructure.


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