The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Mar. 11, 2022
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Shahaji B. More, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some implementations, a buffer layer is formed under a source/drain region of a device. A shape of the buffer layer may include a curved top surface having a height that extends to increase coverage of nanosheets of a fin structure of the device. The shape also includes regions having widths that extend towards shallow trench isolation regions of the device. The shape reduces a likelihood of dopants diffusing from the source/drain region into a mesa region of the fin structure. As a result, a performance of the device may be increased by decreasing short channel effects, decreasing an off-current of the device, and decreasing leakage within the device, among other examples.