The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Sep. 02, 2021
Applicant:
Enkris Semiconductor, Inc., Suzhou, CN;
Assignee:
ENKRIS SEMICONDUCTOR, INC., Suzhou, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10D 64/311 (2025.01);
Abstract
The present application provides a semiconductor structure and a method for manufacturing the same, which solves a problem that an existing semiconductor structure is difficult to deplete a carrier concentration of a channel under a gate to realize an enhancement mode device. The semiconductor structure includes: a channel layer and a barrier layer superimposed in sequence, wherein a gate region is defined on a surface of the barrier layer; a plurality of trenches formed in the gate region, wherein the plurality of trenches extend into the channel layer; and a P-type semiconductor material filling the plurality of trenches.