The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Jul. 17, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Ming Chyi Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/66 (2025.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10D 1/665 (2025.01); H01L 23/3157 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H10D 1/047 (2025.01); H10D 1/692 (2025.01);
Abstract

In some embodiments, the present disclosure relates to an integrated circuit (IC), including a first insulating layer which includes a first metal interconnect structure stacked above a bottom die. Including a substrate disposed above the first insulating layer, a second metal interconnect structure disposed above the substrate, a through-substrate via (TSV) directly connecting the first metal interconnect structure to the second metal interconnect structure, and a stacked deep trench capacitor (DTC) structure disposed in the substrate. The DTC structure includes a first plurality of trenches extending from a first side of the substrate and a second plurality of trenches extending from a second side of the substrate.


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