Method for forming semiconductor structure and semiconductor structure

Abstract

A method for forming semiconductor structure includes: providing a semiconductor substrate, which at least includes discrete conducting layers in the semiconductor substrate; forming discretely arranged supporting structures on the semiconductor substrate, lower portions of the supporting structures including a bottom conducting layers, and capacitor openings being included between the supporting structures, and the bottom conducting layers being electrically connected with the conducting layers; forming lower electrodes on sidewalls of the supporting structures, the lower electrodes being electrically connected with the bottom conducting layers; forming a capacitor dielectric layer covering tops of the supporting structures, sidewalls of the lower electrodes, and bottoms of the capacitor openings; and forming an upper electrode covering the capacitor dielectric layer), to form a capacitor structure. A semiconductor structure is also provided.