The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jul. 05, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Jingwen Lu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A manufacturing method of a semiconductor structure is provided, and the manufacturing method includes the following operations. A first trench is formed on the semiconductor substrate, in which the first trench penetrates at least two of the conductive channels of a transistor, at least part of each of the conductive channels is located at the bottom of the first trench, an oxide layer is provided between two adjacent ones of the conductive channels, and each of the conductive channels has a bump structure in the first trench relative to the oxide layer. The shape of the bump structure of each of the conductive channels at the bottom of the first trench is adjusted by etching at the bottom of the first trench, so that the bump structure has at least two protrusions. A gate structure is formed in the first trench.