The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Aug. 10, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Chien-Chih Chen, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/09 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/094 (2013.01); G03F 7/091 (2013.01); H01L 21/0276 (2013.01);
Abstract
A multilayer structure for lithography patterning is provided. The multilayer structure includes a substrate, a bottom anti-reflective coating (BARC) layer over the substrate, and a photoresist layer over the BARC layer. The BARC layer includes a polymer and a hydrolysis promoting agent. The photoresist layer includes an organometallic dimer obtained by partial hydrolysis of a precursor organometallic compound comprising hydrolysable ligands.
Quick Actions:
Chen, Chien-Chih. (2025). Metallic photoresist patterning and defect improvement (U.S. Patent No. 12353132). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12353132
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile