The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2025
Filed:
Jul. 10, 2023
Infineon Technologies Canada Inc., Ottawa, CA;
Iman Abdali Mashhadi, Kanata, CA;
Thomas William MacElwee, Nepean, CA;
Mohammad Bozorgi, Kanata, CA;
Ting-Hsiang Hsu, Hsinchu, TW;
Meng-ta You, Hsinchu, TW;
Regina Inyangat Akudo, Kanata, CA;
Yueh Lin Chiang, Ottawa, CA;
Infineon Technologies Canada Inc., Ottawa, CA;
Abstract
Wafer testing of a power transistor for a current property of the power transistor. Wafer testing of a power transistor is performed by using a sense transistor constructed using the same epitaxial stack as was used to construct the power transistor. The current property of the sense transistor is then measured, and the current property of the power transistor can be determined from that measurement. Furthermore, the sense transistor is pre-conditioned prior to the measurement by alternately turning on and off the sense transistor multiple cycles while allowing a source terminal of the power transistor to float. This simulates operating conditions of the power transistor, thereby allowing for measurement of the current property of the power transistor as it would likely be in operation.