The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Apr. 24, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Timothy J. Miller, Ipswich, MA (US);

Vikram M. Bhosle, North Reading, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/06 (2006.01); H01J 37/34 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3492 (2013.01); C23C 14/0682 (2013.01); C23C 14/0694 (2013.01); C23C 14/345 (2013.01); H01J 37/347 (2013.01); H01L 21/26506 (2013.01); H01J 2237/2001 (2013.01); H01J 2237/332 (2013.01);
Abstract

Disclosed herein are approaches for treating a film layer of a semiconductor device to modify an etch resistance of the film later. In one approach, a method may include forming a first film over a substrate base, depositing a second film over the first film, and introducing an inert species into the second film while the second film is deposited over the first film, wherein the inert species increases an etch-resistance of a first portion of the first film. The method may further include removing the second film by stopping deposition of the second film while continuing to introduce the inert species into the second film.


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