The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Aug. 24, 2021
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Desmond Jia Jun Loy, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Shyue Seng Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/828 (2023.02); H10N 70/011 (2023.02); H10N 70/823 (2023.02); H10N 70/841 (2023.02);
Abstract

The disclosed subject matter relates generally to structures, memory devices and a method of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices having a spacer element on a side of the electrode. The present disclosure provides a memory device including a first electrode having a side, the side has upper and lower portions, a spacer element on the lower portion of the side of the first electrode, a resistive layer on the upper portion of the side of the first electrode, and a second electrode laterally adjacent to the side of the first electrode. The second electrode has a top surface, in which the top surface has a concave profile.


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