The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jul. 22, 2022
International Business Machines Corporation, Armonk, NY (US);
Koichi Motoyama, Clifton Park, NY (US);
Oscar Van Der Straten, Guilderland Center, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of present invention provide a method of forming a MRAM structure. The method includes forming a magnetic tunnel junction (MTJ) stack; forming a first dielectric layer to a level above a tunnel barrier layer of the MTJ stack, the first dielectric layer partially covering the MTJ stack with a top surface of the MTJ stack being exposed; depositing an etch-stop layer covering the top surface of the MTJ stack and a top surface of the first dielectric layer; depositing a second dielectric layer covering the etch-stop layer; forming an opening in the second dielectric layer; removing a portion of the etch-stop layer above the top surface of the MTJ stack; and forming a top contact by depositing a conductive material in the opening. An MRAM structure formed thereby is also provided.