The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Mar. 18, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Feng Chang, New Taipei, TW;
Jam-Wem Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device is provided, including a first well of a first conductivity type disposed on a substrate, a second well of a second conductivity type, different from the conductivity type, surrounding the first well in a layout view, a third well of the first conductivity type, in which a portion of the second well is interposed between the first well and the third well, a first doped region of the second conductivity type that is in the first well and coupled to an input/output (I/O) pad; and at least one second doped region of the first conductivity type that is in the third well and coupled to a first supply voltage terminal. The first doped region, the at least one second doped region, the first well and the third well discharge a first electrostatic discharge (ESD) current between the I/O pad and the first voltage terminal.