The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

May. 27, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yen Lian Lai, Hsinchu, TW;

Chun Yu Chen, Hsinchu, TW;

Yung Feng Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); H10D 84/40 (2025.01);
U.S. Cl.
CPC ...
H10D 64/512 (2025.01); H01L 23/3142 (2013.01); H10D 30/6219 (2025.01); H10D 30/6735 (2025.01); H10D 64/257 (2025.01); H10D 84/40 (2025.01);
Abstract

Integrated circuit (IC) chips are provided. An IC chip according to the present corner area between an outer corner of the device region and an inner corner of the ring region. The ring region includes a first active region extending along a first direction, a first source/drain contact disposed partially over the first active region and extending along the first direction, and first gate structures disposed completely over the first active region and each extending lengthwise along the first direction. The corner area includes a second active region extending along a second direction that forms an acute angle with the first direction, a second source/drain contact disposed partially over the second active region and extending along the second direction, and second gate structures disposed over the second active region and each extending along the first direction.


Find Patent Forward Citations

Loading…