The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jan. 21, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Cheng-Ting Chung, Hsinchu, TW;
Jin Cai, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 48/36 (2025.01); H01L 21/02 (2006.01); H10D 30/67 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01); H10K 10/46 (2023.01); H10K 85/20 (2023.01);
U.S. Cl.
CPC ...
H10D 48/362 (2025.01); H01L 21/02568 (2013.01); H10D 30/6713 (2025.01); H10D 30/6757 (2025.01); H10D 62/80 (2025.01); H10D 99/00 (2025.01); H10K 10/464 (2023.02); H10K 10/484 (2023.02); H10K 85/221 (2023.02);
Abstract
An integrated circuit includes a two-dimensional transistor having a channel region having lateral ends in contact with first and second source/drain regions. The transistor includes a gate dielectric that is aligned with the lateral ends of the channel region. The transistor includes a gate metal on the gate dielectric. The gate metal has a relatively small lateral overlap of the first and second source/drain regions.