The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Feb. 12, 2024
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Judson R. Holt, Ballston Lake, NY (US);
Vibhor Jain, Williston, VT (US);
Alexander M. Derrickson, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 12/01 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 12/411 (2025.01); H10D 12/01 (2025.01); H10D 62/115 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region; an emitter region on a first side of the extrinsic base region; a collector region on a second side of the extrinsic base region; and a gate structure comprising a gate oxide and a gate control in a same channel region as the extrinsic base region.