The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Apr. 28, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Shuangqiang Luo, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/10 (2023.02);
Abstract
Methods, systems, and devices for divider and contact formation for memory cells are described. In some examples, a protective mask (e.g., a photoresist layer) may be formed over existing circuit structures above a substrate. Contact structures may be exposed when the protective mask is removed. In some examples, the protective mask may be removed using a dry etching operation. In some examples, one or more additional etching operations may be performed to expose (and subsequently fabricate) additional circuit structures.