The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Oct. 29, 2021
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Liang Chen, Wuhan, CN;
Wei Liu, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/20 (2023.01); H10B 41/20 (2023.01); H10B 41/41 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 41/41 (2023.02); H10B 41/20 (2023.02); H10B 43/20 (2023.02); H10B 43/40 (2023.02);
Abstract
In certain aspects, a three-dimensional (3D) memory device includes a single crystalline silicon layer, a polysilicon layer, a transistor in contact with the single crystalline silicon layer, and a channel structure in contact with the polysilicon layer. The polysilicon layer and the single crystalline silicon layer are nonoverlapping and at least partially noncoplanar.