The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
May. 12, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Yu Ling, Hsinchu, TW;
Katherine H. Chiang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A memory device includes a first transistor and a second transistor. Each of the first and second transistors includes a first source/drain electrode, a second source/drain electrode, a channel feature, a gate dielectric and a gate electrode. The second source/drain electrode is coplanar with the first source/drain electrode. The channel feature is disposed between and interconnects the first and second source/drain electrodes. The gate dielectric is disposed over the channel feature. The gate electrode is disposed over the gate dielectric, and overlaps the channel feature. The second transistor is disposed over the first transistor. The first source/drain electrode of the second transistor is connected to the gate electrode of the first transistor.