The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Dec. 06, 2021
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Lin Hou, Leuven, BE;

Peter Rabkin, Cupertino, CA (US);

Yangyin Chen, Leuven, BE;

Masaaki Higashitani, Cupertino, CA (US);

Rahul Sharangpani, Fremont, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/80 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 2224/02233 (2013.01); H01L 2224/05556 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80007 (2013.01); H01L 2224/8002 (2013.01);
Abstract

A method of forming a bonded assembly includes providing a first semiconductor die containing and first metallic bonding structures and a first dielectric capping layer containing openings and contacting distal horizontal surfaces of the first metallic bonding structures, providing a second semiconductor die containing second metallic bonding structures, disposing the second semiconductor die in contact with the first semiconductor die, and annealing the second semiconductor die in contact with the first semiconductor die such that a metallic material of at least one of the first metallic bonding structures and the second metallic bonding structures expands to fill the openings in the first dielectric capping layer to bond at least a first subset of the first metallic bonding structures to at least a first subset of the second metallic bonding structures.


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