The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Aug. 27, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuang-Wei Cheng, Hsinchu, TW;
Chyi-Tsong Ni, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device is described. A semiconductor substrate having at least one electrical component is provided. A patterned wiring layer is formed above the semiconductor substrate. The patterned wiring layer includes a plurality of wiring portions, where adjacent of the wiring portions are separated from each other. A first insulating passivation layer is formed over the wiring portions in a region between adjacent wiring portions. The first insulating passivation layer has a horizontal surface in the region between adjacent wiring portions. A second insulating passivation layer is formed on the first insulating passivation layer, wherein the first insulating passivation layer has a side surface which makes an angle with the horizontal surface of greater than 103°.