The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Aug. 19, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi-Bo Liao, Hsinchu, TW;
Chun-Yuan Chen, Hsinchu, TW;
Lin-Yu Huang, Hsinchu, TW;
Yi-Hsun Chiu, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device is provided. The semiconductor device has a stack of parallel metal gates formed on a first side of a substrate, a first pair of insulation regions extending across the stack of parallel metal gates, a second pair of insulation regions replacing two of the parallel metal gates, a first isolated region enclosed by the first and second pairs of insulation layers, a first via formed within the isolated region, and an insulation layer replacing the metal gates located within the isolated region. Tree or more metal gates are located within the isolated region, and the first via extends through a portion of a center one of the three metal gates within the isolated region.