The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
May. 12, 2022
Nanya Technology Corporation, New Taipei, TW;
Shing-Yih Shih, New Taipei, TW;
Chih-Ching Lin, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present application provides a method of manufacturing a semiconductor structure having vias with different dimensions and a manufacturing method of the semiconductor structure. The method includes: providing a first wafer including a first substrate, a first dielectric layer over the first substrate, and a first conductive pad surrounded by the first dielectric layer; providing a second wafer including a second dielectric layer, a second substrate over the second dielectric layer, and a second conductive pad surrounded by the second dielectric layer; forming a passivation over the second substrate; forming a first conductive via extending from the first conductive pad through the second wafer and the passivation, and having a first width surrounded by the second wafer; and forming a second conductive via extending from the second conductive pad through the passivation and the second substrate and partially through the second dielectric layer, and having a second width surrounded by the second wafer.