The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Mar. 31, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
An improved method of forming conductive features and a semiconductor device formed by the same are disclosed. In an embodiment, a method includes providing a first conductive feature in a first dielectric layer; selectively depositing an etch-resistant layer over the first dielectric layer, a sidewall of the etch-resistant layer being coterminous with a sidewall of the first dielectric layer; after selectively depositing the etch-resistant layer, selectively depositing a capping layer over the first conductive feature adjacent the etch-resistant layer, a sidewall of the capping layer being coterminous with a sidewall of the first conductive feature; and forming a second conductive feature over the capping layer, the etch-resistant layer separating the second conductive feature from the first dielectric layer.