The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Jan. 08, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Yexiao Yu, Hefei, CN;

Zhongming Liu, Hefei, CN;

Zhong Kong, Hefei, CN;

Longyang Chen, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H10B 12/01 (2023.02);
Abstract

Embodiments provide a semiconductor structure and a fabricating method. The method includes: providing a substrate, where a plurality of active areas arranged at intervals are provided in the substrate, and the substrate is covered with an insulating layer and a barrier layer stacked sequentially; forming, in the barrier layer, a plurality of first trenches arranged at intervals and extending along a first direction and penetrating through the barrier layer; forming a filling layer in the first trenches, and forming a first mask layer on the barrier layer and the filling layer; forming, in the first mask layer, a plurality of second trenches arranged at intervals and extending along a second direction and exposing the filling layer; and removing the filling layer exposed in the second trench and the insulating layer corresponding to the filling layer to form contact holes.


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