The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jun. 30, 2022
Tokyo Electron Limited, Tokyo, JP;
Tatsuya Yamaguchi, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device, includes forming a sacrificial film made of a polymer having a urea bond on a substrate by supplying an amine and an isocyanate to a surface of the substrate, wherein the sacrificial film is provided in a specific region of the substrate; performing a predetermined process on the substrate on which the sacrificial film is formed; and removing the sacrificial film by heating the substrate to depolymerize the polymer, wherein a carbon bonded to a nitrogen atom contained in an isocyanate group of the isocyanate is a secondary or tertiary non-aromatic carbon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile