The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
May. 07, 2021
Tokyo Electron Limited, Tokyo, JP;
Bongseong Kim, Miyagi, JP;
Masahiro Inoue, Miyagi, JP;
Mitsunori Ohata, Miyagi, JP;
Ken Kobayashi, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A plasma processing apparatus includes a plasma processing chamber, a substrate support, a source RF generator, and a bias RF generator. The substrate support is disposed within the plasma processing chamber. The source RF generator is configured to generate a source RF signal. The source RF signal includes source cycles, and each of the source cycles includes a source ON state and a source OFF state. The source ON state has at least two source power levels. The bias RF generator is coupled to the substrate support and configured to generate a bias RF signal. The bias RF signal includes bias cycles corresponding to the source cycles, respectively. Each of the bias cycles includes a bias ON state and a bias OFF state. The bias ON state has at least two bias power levels.