The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

Jan. 26, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Guang Shen, Shanghai, CN;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50004 (2013.01); G06F 3/0619 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01);
Abstract

Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include computing an adjustment value of a threshold voltage offset associated with a block family of the memory device; determining that the adjustment value satisfies a threshold voltage criterion, wherein the threshold voltage criterion comprises a reference voltage level corresponding to known valley margins of the memory device; and updating the threshold voltage offset.


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Shen, Guang. (2025). Tracking charge loss in memory sub-systems (U.S. Patent No. 12347511). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12347511

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