The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
May. 24, 2023
United Microelectronics Corp., Hsinchu, TW;
Chi-Hsiu Hsu, Hsinchu County, TW;
Yu-Huan Yeh, Hsinchu, TW;
Cheng-Hsiao Lai, Chiayi County, TW;
Guan-Lin Chen, New Taipei, TW;
Chuan-Fu Wang, Miaoli County, TW;
Hung-Yu Fan Chiang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A forming method of a ReRAM array includes steps as follows: Firstly, a first pulse is applied to a first ReRAM unit in the ReRAM array. Afterwards, a second pulse is applied to the first ReRAM unit, wherein the electrical property of the first pulse is opposite to that of the second pulse. Then, a verification pulse is applied to the first ReRAM unit to verify whether the first resistance value of the first ReRAM unit passes a preset threshold. When the first resistance value passes the preset threshold value, a third pulse is applied to the first ReRAM unit, wherein the first pulse and the third pulse have the same electrical property, and the first pulse has a voltage value substantially the same to that of the third pulse.