The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Feb. 25, 2022
Intel Corporation, Santa Clara, CA (US);
Lester Lampert, Portland, OR (US);
Guoji Zheng, Hillsboro, OR (US);
Felix Frederic Leonhard Borjans, Portland, OR (US);
Ravi Pillarisetty, Portland, OR (US);
Hubert C. George, Portland, OR (US);
Simon Schaal, Hillsboro, OR (US);
Florian Luethi, Portland, OR (US);
Thomas Francis Watson, Portland, OR (US);
Jeanette M. Roberts, North Plains, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An array of spin qubits relies on a gradient magnetic field to ensure that the qubits are separated in frequency in order to be individually addressable. Furthermore, a strong magnetic field gradient is required to electrically drive the EDSR of the qubits. Quantum dot devices and related methods and systems that integrate magnetic materials in the gates to provide a gradient magnetic field are disclosed. Magnetic materials in different gates may be of different heights to improve frequency separation of neighboring qubits. Unlike previous approaches to quantum dot formation and manipulation, various embodiments of the quantum dot devices disclosed herein may enable improved control over magnetic fields and their gradients to realize better frequency targeting of individual qubits, help minimize adverse effects of charge noise on qubit decoherence and provide good scalability in the number of quantum dots included in the device.