The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Jun. 15, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Beijing Superstring Academy of Memory Technology, Beijing, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY, Beijing, CN;
Abstract
Embodiments of the present disclosure provide a method of manufacturing a magnetic random access memory (MRAM) and a MRAM. The method includes: preparing a bottom electrode through hole, a bottom electrode, a magnetic tunnel junction (MTJ), a top electrode, and an insulating layer sequentially on a semiconductor substrate; forming a first interlayer dielectric layer on the insulating layer; forming an etching stop layer on the first interlayer dielectric layer; forming a second interlayer dielectric layer on the etching stop layer; etching a part of the second interlayer dielectric layer above the top electrode to the etching stop layer, and forming a first trench; performing a self-alignment implantation inclined on a part of the first interlayer dielectric layer corresponding to a bottom of the first trench; continuously etching through the first trench to a top end surface of the top electrode, and forming a second trench.