The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Apr. 20, 2021
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Junjing Bao, San Diego, CA (US);
John Jianhong Zhu, San Diego, CA (US);
Giridhar Nallapati, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/27 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 64/512 (2025.01); H10D 64/021 (2025.01); H10D 64/251 (2025.01); H10D 64/514 (2025.01); H10D 64/517 (2025.01); H10D 84/0147 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract
Disclosed are apparatuses including a transistor cell and methods of fabricating the transistor cell. The transistor cell may include a substrate, an active region and a gate having a gate contact in the active region. The transistor cell may further include a first portion of a spacer of the gate contact formed from a first material, and a second portion of the spacer of the gate contact formed from a second material.