The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
May. 18, 2022
Applicant:
Nexperia B.v., Nijmegen, NL;
Inventors:
Steven Peake, Nijmegen, NL;
Phil Rutter, Nijmegen, NL;
Assignee:
Nexperia B.V., Nijmegen, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H10D 30/665 (2025.01); H10D 30/0297 (2025.01); H10D 30/668 (2025.01);
Abstract
The present disclosure relates to a trench metal-oxide-semiconductor field-effect transistor, trench MOSFET, and to a method for manufacturing such transistors. In particular, the present disclosure relates to trench MOSFETs having deep trenches adjacent to the more shallow gate defining trench for obtaining a RESURF effect. According to the present disclosure, an ion implantation region of a charge type similar to that of the drift region is formed in the drift region. The ion implantation region extends below the deep trenches of the trench MOSFET and is vertically aligned with a base of the deep trenches.