Method for manufacturing semiconductor structure and semiconductor structure

Abstract

A method for manufacturing a semiconductor structure includes: providing a substrate and multiple spaced active areas on the substrate and an isolation structure between the adjacent active areas, in which, each of active areas includes multiple sub-active areas which intersect the initial bit line, and an initial bit line is provided on the substrate; patterning the active areas, the isolation structure and the initial bit line to form a word line trench located within the sub-active areas, the isolation structure, and the initial bit line, in which the remaining initial bit line serves as a bit line; forming a gate dielectric layer located on surfaces of the sub-active areas exposed by the word line trench; forming a word line and an insulating structure between the word line and the bit line, in which the word line is located on the gate dielectric layer and fills the word line trench.