The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Dec. 15, 2023
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Tae H. Kim, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/003 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 19/018521 (2013.01); H03K 19/00315 (2013.01); H03K 19/018528 (2013.01);
Abstract

A memory device includes a level shifting circuitry. The level shifting circuitry includes an input circuitry configured to receive an input to the level shifting circuitry in a first voltage domain. The level shifting circuitry also includes a cross-junction circuitry electrically coupled to a first node of the input circuitry comprising multiple transistors that are electrically coupled in a cross-junction. The level shifting circuitry also includes an output staging circuitry electrically coupled to a second node of the cross-junction circuitry. The output staging circuitry is configured to transmit an output in a second voltage domain. The output staging circuitry includes a transistor and voltage stress reduction circuitry configured to mitigate degradation of the transistor by reducing voltage stresses across the transistor during transitions in the level shifting circuitry.


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