The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Dec. 20, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Shih-Pei Chou, Tainan, TW;
Jiech-Fun Lu, Madou Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a first bond pad isolation structure within a substrate. A second bond pad isolation structure is formed with the substrate. The second bond pad isolation structure is disposed laterally between inner sidewalls of the first bond pad isolation structure. The first bond pad isolation structure and the second bond pad isolation structure are formed concurrently with one another. A bond pad is formed extending through the substrate. The bond pad comprises a conductive body overlying the second bond pad isolation structure and a conductive protrusion extending from the conductive body to below the substrate. The second bond pad isolation structure laterally wraps around the conductive protrusion.