The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Jun. 14, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Georgios Dogiamis, Chandler, AZ (US);

Qiang Yu, Saratoga, CA (US);

Adel A. Elsherbini, Tempe, AZ (US);

Shawna M. Liff, Scottsdale, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 24/08 (2013.01); H01L 23/5383 (2013.01); H01L 23/5384 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01); H01L 24/80 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/157 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/15788 (2013.01); H01L 2924/1579 (2013.01);
Abstract

Microelectronic assemblies, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a die-level interposer having a first surface and an opposing second surface; a first die coupled to the first surface of the die-level interposer by a first hybrid bonding region having a first pitch; a second die coupled to the second surface of the die-level interposer by a second hybrid bonding region having a second pitch different from the first pitch; and a third die coupled to the second surface of the die-level interposer by a third hybrid bonding region having a third pitch different from the first and second pitches.


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