The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
May. 06, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Ryutaro Suda, Miyagi, JP;
Maju Tomura, Miyagi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32449 (2013.01); H01J 37/32816 (2013.01); H01J 37/32972 (2013.01); H01J 2237/3341 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/31144 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01);
Abstract
A substrate processing method includes: providing a substrate including a silicon-containing film in a chamber; supplying a processing gas including HF gas into the chamber; etching the silicon-containing film with plasma generated from the processing gas, thereby forming a recess in the silicon-containing film; and controlling a partial pressure of the HF gas to decrease the partial pressure of the HF gas with an increase of an aspect ratio of the recess.