The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Jan. 17, 2023
Applicant:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Inventors:
Assignee:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/31105 (2013.01); H01L 21/31127 (2013.01); H01L 21/31144 (2013.01); H01L 21/76804 (2013.01); H01L 21/76807 (2013.01); H01L 21/76816 (2013.01);
Abstract
A method of patterning an underlying structure includes the following. A first patterning process is performed on the underlying structure to form a first patterned underlying structure including a first opening. A patterned photoresist layer is formed, and the patterned photoresist layer fills the first opening. A second patterning process is performed on the first patterned underlying structure to form a second patterned underlying structure including the first opening and a second opening.