The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2025

Filed:

Feb. 21, 2023
Applicant:

Nissan Chemical Corporation, Tokyo, JP;

Inventors:

Takahiro Kishioka, Toyama, JP;

Shunsuke Moriya, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/09 (2006.01); C09D 125/14 (2006.01); C09D 133/14 (2006.01); G03F 7/00 (2006.01); G03F 7/42 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/09 (2013.01); C09D 125/14 (2013.01); C09D 133/14 (2013.01); G03F 7/422 (2013.01); G03F 7/70008 (2013.01); H01L 21/0271 (2013.01);
Abstract

A photocurable composition including: a self-crosslinking polymer including a first monomer unit including an aryl ketone residue in a side chain, and a second monomer unit including in a side chain an aliphatic hydrocarbon residue including a carbon atom susceptible to a hydrogen abstraction reaction and/or an aromatic ring residue; and a solvent. Also, a method for manufacturing a semiconductor device including the steps of forming a resist film on a semiconductor substrate, forming a resist pattern by irradiating the resist film with light or an electron beam and then developing the resist film, and processing the semiconductor substrate by etching, the method further including a step of forming a protective film from the photocurable composition on the front edge and optionally the bevel and/or the back edge of a wafer for manufacturing a semiconductor.


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