The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
May. 23, 2022
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventors:
Pascal Gouraud, St Martin, FR;
Laurent Favennec, Villard Bonnot, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/231 (2023.02); G11C 13/0004 (2013.01); H10B 63/80 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/882 (2023.02); H10N 70/8833 (2023.02);
Abstract
A memory cell is manufactured by: (a) forming a stack comprising a first layer made of a phase change material and a second layer made of a conductive material; (b) forming a mask on the stack covering only the memory cell location; and (c) etching portions of the stack not covered by the first mask. The formation of the mask covering only the memory cell location comprises defining a first mask extending in a row direction for each row of memory cell locations and then patterning the first mask in a column direction for each column of memory cell locations.