The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

May. 03, 2024
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Sagar Premnath Karalkar, Chelmsford, MA (US);

Alain François Loiseau, Williston, VT (US);

Vibhor Jain, Clifton Park, NY (US);

Wei Liang, South Burlington, VT (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 89/713 (2025.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a device triggered silicon control rectifier (SCR) and methods of manufacture. the structure includes: a vertical silicon controlled rectifier having a diffusion region in a well of a semiconductor substrate; a vertical triggering device sharing the diffusion region with the vertical silicon controlled rectifier; and a body contact adjacent to the vertical triggering device and electrically connecting to the well.


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