The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Jan. 09, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chih-Wei Wang, Hsinchu, TW;
Chia-Ming Tsai, Hsinchu, TW;
Ke-Chih Liu, Hsinchu, TW;
Chandrashekhar Prakash Savant, Hsinchu, TW;
Tien-Wei Yu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/66 (2025.01); H01L 21/28 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 64/667 (2025.01); H01L 21/28088 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 62/115 (2025.01); H10D 84/0135 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01);
Abstract
The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.