The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Aug. 13, 2024
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Stefan Dünkel, Dresden, DE;
Dominik Martin Kleimaier, Dresden, DE;
Halid Mulaosmanovic, Dresden, DE;
Johannes Müller, Dresden, DE;
Sven Beyer, Dresden, DE;
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2025.01); H01L 21/762 (2006.01); H10B 51/30 (2023.01); H10B 51/40 (2023.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H10D 30/701 (2025.01); H01L 21/76224 (2013.01); H10B 51/30 (2023.02); H10B 51/40 (2023.02); H10D 64/661 (2025.01);
Abstract
An IC structure includes an MFMIS memory cell on a semiconductor substrate, and a CMOS transistor adjacent the MFMIS memory cell on the same semiconductor substrate. A method provides co-integration of the MFMIS memory cell with the CMOS transistor. The method may optionally co-integrate an MFIS memory cell. The IC structure and method provide a lower cost approach to forming MFMIS memory cells, which provide a number of advantages over MFIS memory cells.