The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Nov. 17, 2022
Globalwafers Co., Ltd., Hsinchu, TW;
Po-Jung Lin, Hsinchu, TW;
Jia-Zhe Liu, Hsinchu, TW;
GLOBALWAFERS CO., LTD., Hsinchu, TW;
Abstract
An improved high electron mobility transistor (HEMT) structure includes a substrate, a nitride nucleation layer, a nitride buffer layer, a nitride channel layer, and a barrier layer. The nitride buffer layer includes a metal dopant. The nitride channel layer has a metal doping concentration less than that of the nitride buffer layer. A two-dimensional electron gas is formed in the nitride channel layer along an interface between the nitride channel layer and the barrier layer. A metal doping concentration X at an interface between the nitride buffer layer and the nitride channel layer is defined as the number of metal atoms per cubic centimeter, and a thickness Y of the nitride channel later is in microns (μm) and satisfies Y≤(0.2171)ln(X)−8.34, thereby reducing an influence of the metal dopant to a sheet resistance value of the nitride channel layer and providing the improved HEMT structure having a better performance.