The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Mar. 07, 2023
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chung-Fu Chang, Tainan, TW;
Kuan-Hung Chen, Taichung, TW;
Guang-Yu Lo, New Taipei, TW;
Chun-Chia Chen, Tainan, TW;
Chun-Tsen Lu, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 21/02 (2006.01); H01L 21/28 (2025.01); H10D 30/60 (2025.01); H10D 30/62 (2025.01); H10D 64/68 (2025.01);
U.S. Cl.
CPC ...
H10D 30/024 (2025.01); H01L 21/0214 (2013.01); H01L 21/02164 (2013.01); H01L 21/022 (2013.01); H01L 21/28202 (2013.01); H10D 30/608 (2025.01); H10D 30/62 (2025.01); H10D 64/681 (2025.01);
Abstract
A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.