The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Jun. 09, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Ying-Chih Chen, Hsinchu County, TW;
Blanka Magyari-Kope, Hsinchu County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H10B 51/30 (2023.01); H10D 30/69 (2025.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H10B 51/30 (2023.02); H10D 30/701 (2025.01);
Abstract
A semiconductor device includes a first electrode layer, a ferroelectric layer, and a second electrode layer. A material of the ferroelectric layer comprises a ferroelectric material doped with a first dopant and a second dopant different from the first dopant, and the first dopant comprises cerium. The ferroelectric layer is disposed between the first electrode layer and the second electrode layer.